IRF7306PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 3.6A 8-SOIC
PDF
/
Buying Options
Total Price: USD $0.97
Unit Price: USD $0.96805
≥1 USD $0.96805
≥10 USD $0.7942
≥100 USD $0.7695
≥500 USD $0.7448
≥1000 USD $0.7201
Inventory: 1152
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF7306PBF
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 3.6A
Drain-source On Resistance-Max 0.1Ohm
Pulsed Drain Current-Max (IDM) 14A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 1.4W
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IRF7306PBF+price,IRF7306PBF+datasheet,IRF7306PBF+in stock,buy+IRF7306PBF,finder+IRF7306PBF,IRF7306PBF+tutorials,IRF7306PBF+download