IRF7103PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 50V 3A 8-SOIC
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Buying Options
Total Price: USD $0.26
Unit Price: USD $0.25555
≥1 USD $0.25555
≥10 USD $0.20995
≥100 USD $0.2033
≥500 USD $0.19665
≥1000 USD $0.19
Inventory: 202599
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature Standard
Power Dissipation-Max (Abs) 2W
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 50V
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.13Ohm
Drain Current-Max (Abs) (ID) 3A
JEDEC-95 Code MS-012AA
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 130m Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power - Max 2W
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Base Part Number IRF7103PBF
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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