FET Feature Logic Level Gate
Drain to Source Breakdown Voltage -20V
Continuous Drain Current (ID) 2.2A
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.2A
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 15V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 135mOhm @ 2.2A, 4.5V
FET Type 2 P-Channel (Dual)
Max Power Dissipation 960mW
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ