BSO615N
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 2.6A 8SOIC
PDF
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Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 1176
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 60 mJ
Pulsed Drain Current-Max (IDM) 10.4A
Drain-source On Resistance-Max 0.15Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.6A
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Vgs(th) (Max) @ Id 2V @ 20μA
Rds On (Max) @ Id, Vgs 150m Ω @ 2.6A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Number of Elements 2
Qualification Status Not Qualified
Base Part Number BSO615
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 2.6A
Peak Reflow Temperature (Cel) 235
Terminal Form GULL WING
Max Power Dissipation 2W
Voltage - Rated DC 60V
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e0
Series SIPMOS?
Published 2000
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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