Feedback Cap-Max (Crss) 100 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.015Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7.6A
Turn-Off Delay Time 21 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 15V
Vgs(th) (Max) @ Id 2V @ 25μA
Rds On (Max) @ Id, Vgs 15m Ω @ 9.1A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number BSO150N03
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.4W
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ