FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 0.16nC @ 5V, 0.044nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.7A 500mA
Input Capacitance (Ciss) (Max) @ Vds 16pF @ 50V 7pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 100μA, 2.5V @ 20μA
Rds On (Max) @ Id, Vgs 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
FET Type 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ