EPC2106ENGRT
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
TRANS GAN 2N-CH 100V BUMPED DIE
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Rds On Max 70 mΩ
FET Feature GaNFET (Gallium Nitride)
Input Capacitance 75pF
Continuous Drain Current (ID) 1.7A
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.7A
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 600μA
Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
FET Type 2 N-Channel (Half Bridge)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2015
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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