EPC2105ENGRT
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2NCH 80V 9.5A DIE
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Rds On Max 14.5 mΩ
FET Feature GaNFET (Gallium Nitride)
Input Capacitance 300pF
Continuous Drain Current (ID) 9.5A
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9.5A
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V
FET Type 2 N-Channel (Half Bridge)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Published 2015
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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