EPC2105
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
GAN TRANS ASYMMETRICAL HALF BRID
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Buying Options
Total Price: USD $8.14
Unit Price: USD $8.14
≥1 USD $8.14
≥10 USD $6.98104
≥100 USD $5.817152
Inventory: 1140
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V 1100pF @ 40V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA
Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
FET Type 2 N-Channel (Half Bridge)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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