FET Feature GaNFET (Gallium Nitride)
Continuous Drain Current (ID) 23A
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Current - Continuous Drain (Id) @ 25°C 23A
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Vgs(th) (Max) @ Id 2.5V @ 5.5mA
Rds On (Max) @ Id, Vgs 6.3mOhm @ 20A, 5V
FET Type 2 N-Channel (Half Bridge)
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ