EPC2102ENGRT
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
GANFET 2 N-CHANNEL 60V 23A DIE
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Technical Details
Technical
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series eGaN?
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 23A Tj
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V
FET Type 2 N-Channel (Half Bridge)
Physical
Supplier Device Package Die
Package / Case Die
Mounting Type Surface Mount
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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