EPC2101
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
TRANS GAN ASYMMETRICAL HALF BRID
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Buying Options
Total Price: USD $8.57
Unit Price: USD $8.5712
≥1 USD $8.5712
≥10 USD $7.3436
≥100 USD $6.119344
Inventory: 570
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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