DMN33D8LDW-13
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 1.23nC @ 10V 250mA 350mW 30V
PDF
/
Buying Options
Total Price: USD $0.05
Unit Price: USD $0.046889
≥1 USD $0.046889
Inventory: 1237
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 350mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 350mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.4 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 48pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 250mA
Drain Current-Max (Abs) (ID) 0.25A
Drain-source On Resistance-Max 3Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Recommended For You
DMN33D8LDW-13+price,DMN33D8LDW-13+datasheet,DMN33D8LDW-13+in stock,buy+DMN33D8LDW-13,finder+DMN33D8LDW-13,DMN33D8LDW-13+tutorials,DMN33D8LDW-13+download