DMN26D0UDJ-7
RoHS 
RoHS compliant
RoHS compliantPackage SOT-963
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 0.24A SOT963
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Buying Options
Total Price: USD $0.33
Unit Price: USD $0.3256
≥1 USD $0.3256
Inventory: 30
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-963
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Powers
Max Power Dissipation 300mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN26D0UDJ
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 3.8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14.1pF @ 15V
Rise Time 7.9 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 15.2 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 240mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.18A
Drain-source On Resistance-Max 3Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 450μm
Length 1.05mm
Width 850μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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