Feedback Cap-Max (Crss) 100 pF
FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 4.5A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.6A
Turn-Off Delay Time 21 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A 2.6A
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 800mW
Subcategory Other Transistors
Additional Feature HIGH RELIABILITY
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ