AON2800
RoHS
/
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 4.5A 6DFN
PDF
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Buying Options
Total Price: USD $0.22
Unit Price: USD $0.22135
≥1 USD $0.22135
≥10 USD $0.1824
≥100 USD $0.1767
≥500 USD $0.171
≥1000 USD $0.1653
Inventory: 1240
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 1.5W
Operating Mode ENHANCEMENT MODE
Power - Max 1.5W
FET Type 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs 47m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 4.5A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status RoHS Compliant
Alternative Model
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