ALD110908APAL
RoHS 
RoHS compliant
RoHS compliantPackage 8-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 10.6V 8DIP
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Rds On Max 500 Ω
Drain to Source Resistance 500Ohm
FET Feature Standard
Input Capacitance 2.5pF
Drain to Source Breakdown Voltage 10V
Gate to Source Voltage (Vgs) 10.6V
Continuous Drain Current (ID) 3mA
Turn-Off Delay Time 10 ns
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C 12mA 3mA
Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V
Vgs(th) (Max) @ Id 810mV @ 1μA
Rds On (Max) @ Id, Vgs 500Ohm @ 4.8V
FET Type 2 N-Channel (Dual) Matched Pair
Power - Max 500mW
Power Dissipation 500mW
Element Configuration Dual
Max Power Dissipation 500mW
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series EPAD?
Published 2005
Packaging Tube
Operating Temperature 0°C~70°C TJ
Physical
Supplier Device Package 8-PDIP
Number of Pins 8
Package / Case 8-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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