Drain to Source Resistance 500Ohm
Drain to Source Breakdown Voltage 10V
Gate to Source Voltage (Vgs) 10.6V
Continuous Drain Current (ID) 12mA
Drain to Source Voltage (Vdss) 10V
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 5V
Vgs(th) (Max) @ Id 1.01V @ 1μA
Rds On (Max) @ Id, Vgs 500Ohm @ 5V
FET Type 4 N-Channel, Matched Pair
Max Power Dissipation 600mW
Min Operating Temperature 0°C
Max Operating Temperature 70°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 0°C~70°C TJ