Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 40W
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Collector Emitter Voltage (VCEO) -100V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 100V
Current - Collector (Ic) (Max) 3A
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -1.2V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C