STX826
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
STMICROELECTRONICS STX826 Bipolar (BJT) Single Transistor, PNP, 30 V, 100 MHz, 900 mW, 3 A, 100 hFE
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Position BOTTOM
Terminal Form WIRE
Base Part Number STX826
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.1V @ 150mA, 3A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 3A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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