Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Collector Emitter Voltage (VCEO) 100V
Polarity/Channel Type PNP
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 1.2W
Subcategory Other Transistors
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.0067
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ