Emitter Base Voltage (VEBO) 9V
Collector Emitter Saturation Voltage 100mV
Collector Emitter Breakdown Voltage 400V
Vce Saturation (Max) @ Ib, Ic 800mV @ 4A, 20A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 6A 5V
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 400V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 160W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ