Emitter Base Voltage (VEBO) 12V
Max Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1V
Collector Emitter Breakdown Voltage 400V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 350mA 5V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 400V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.6W
Subcategory Other Transistors
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ