MJE5852
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 5 @ 5A 5V 500muA 80W 2500ns
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Turn Off Time-Max (toff) 2500ns
VCEsat-Max 5 V
hFE Min 15
Emitter Base Voltage (VEBO) -7V
Collector Base Voltage (VCBO) 450V
Collector Emitter Breakdown Voltage 400V
Vce Saturation (Max) @ Ib, Ic 5V @ 3A, 8A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 500μA
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 5A 5V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 400V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application SWITCHING
Power Dissipation 80W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number MJE585
Current Rating -8A
Max Power Dissipation 80W
Voltage - Rated DC -400V
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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