Emitter Base Voltage (VEBO) 5V
Max Breakdown Voltage 80V
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Collector Emitter Voltage (VCEO) 80V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Case Connection COLLECTOR
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 20W
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ