ESM2012DV
RoHS 
RoHS compliant
RoHS compliantPackage ISOTOP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 120V 120A ISOTOP
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 25.4mm
Technical
Fall Time-Max (tf) 300ns
VCEsat-Max 2 V
hFE Min 1200
Emitter Base Voltage (VEBO) 7V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 120V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 100A
DC Current Gain (hFE) (Min) @ Ic, Vce 1200 @ 100A 5V
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 150V
Transistor Type NPN - Darlington
Transistor Application SWITCHING
Case Connection ISOLATED
Power Dissipation 175W
Configuration DARLINGTON WITH BUILT-IN DIODE
Polarity NPN
Number of Elements 1
Pin Count 4
Base Part Number ESM2012
Current Rating 120A
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 175W
Voltage - Rated DC 120V
Subcategory BIP General Purpose Power
Terminal Finish Nickel (Ni)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case ISOTOP
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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