BUL59
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
STMICROELECTRONICS BUL59 Bipolar (BJT) Single Transistor, NPN, 450 V, 90 W, 5 A, 8 hFE
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Buying Options
Total Price: USD $2.67
Unit Price: USD $2.6714
≥1 USD $2.6714
≥10 USD $2.1926
≥100 USD $2.1242
≥500 USD $2.05485
≥1000 USD $1.98645
Inventory: 1847
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Turn Off Time-Max (toff) 950ns
Emitter Base Voltage (VEBO) 9V
Collector Base Voltage (VCBO) 850V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Breakdown Voltage 400V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 5A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 200μA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 5A 5V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 400V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power Dissipation 90W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BUL59
Max Power Dissipation 90W
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
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