BUL1203EFP
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PWR BIP/S.SIGNAL
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Buying Options
Total Price: USD $0.22
Unit Price: USD $0.224131
≥1 USD $0.224131
≥10 USD $0.211448
≥100 USD $0.199468
≥500 USD $0.188175
≥1000 USD $0.17753
Inventory: 1259
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
hFE Min 10
Emitter Base Voltage (VEBO) 9V
Collector Base Voltage (VCBO) 1.2kV
Collector Emitter Breakdown Voltage 550V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 2A 5V
Max Collector Current 5A
Collector Emitter Voltage (VCEO) 550V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Case Connection ISOLATED
Power Dissipation 36W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number BUL1203
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 36W
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
Alternative Model
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