Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 1kV
Collector Emitter Saturation Voltage 500mV
Collector Emitter Breakdown Voltage 450V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4A, 20A
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 450V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 200W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ