Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 3V
Transition Frequency 20MHz
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A 3V
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 100V
Transistor Type PNP - Darlington
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 80W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ