BDW84C
RoHS 
RoHS compliant
RoHS compliantPackage TO-218-3, TO-218AC
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 750 @ 6A 3V 1mA 130W 100V
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 4 V
hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 6A 3V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 100V
Transistor Type PNP - Darlington
Transistor Application SWITCHING
Power - Max 130W
Element Configuration Single
Polarity PNP
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number BDW84
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating -15A
Peak Reflow Temperature (Cel) 245
Max Power Dissipation 130W
Voltage - Rated DC -100V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-218-3, TO-218AC
Mounting Type Through Hole
Mount Through Hole
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