BD535
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 2A 2V 100muA 50W 12MHz
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Buying Options
Total Price: USD $0.47
Unit Price: USD $0.47355
≥1 USD $0.47355
≥10 USD $0.389829
≥100 USD $0.34666
≥500 USD $0.304799
≥1000 USD $0.279944
Inventory: 36
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
VCEsat-Max 0.8 V
hFE Min 20
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 800mV
Transition Frequency 12MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 800mV @ 600mA, 6A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 2A 2V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 12MHz
Transistor Application SWITCHING
Power Dissipation 50W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BD535
Current Rating 8A
Max Power Dissipation 50W
Voltage - Rated DC 60V
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
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