BD442
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 500mA 1V 100muA 36W 3MHz
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Buying Options
Total Price: USD $0.12
Unit Price: USD $0.1197
≥1 USD $0.1197
≥10 USD $0.09785
≥100 USD $0.095
≥500 USD $0.09215
≥1000 USD $0.0893
≥10000 USD $0.0798
Inventory: 21703
Minimum: 1
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Technical Details
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 36W
Frequency 3MHz
Base Part Number BD442
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 800mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
VCEsat-Max 0.8 V
Dimensions
Height 10.8mm
Length 7.8mm
Width 2.7mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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