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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 1A 4V 300muA 40W 3MHz
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

hFE Min 10
Emitter Base Voltage (VEBO) 5V
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power Dissipation 40W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BD241
Current Rating 3A
Max Power Dissipation 40W
Voltage - Rated DC 60V
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

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