Emitter Base Voltage (VEBO) 5V
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max) 300μA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Collector Emitter Voltage (VCEO) 60V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 40W
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ