BD135-16
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Silicon Trnsistr
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Buying Options
Total Price: USD $0.49
Unit Price: USD $0.4928
≥1 USD $0.4928
≥10 USD $0.395296
≥100 USD $0.293744
≥500 USD $0.229328
≥1000 USD $0.186393
≥3000 USD $0.166628
Inventory: 7892
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 2.7mm
Length 7.8mm
Height 10.8mm
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 45V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 250MHz
Collector Emitter Breakdown Voltage 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Max Collector Current 1.5A
Collector Emitter Voltage (VCEO) 45V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application AMPLIFIER
Power Dissipation 1.25W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number BD135
Max Power Dissipation 1.25W
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status NRND (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
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