Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Max Breakdown Voltage 80V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 120MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Collector Emitter Voltage (VCEO) 80V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.6W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ