Emitter Base Voltage (VEBO) 5V
Frequency - Transition 100MHz
Max Breakdown Voltage 30V
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500mA, 5A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Collector Emitter Voltage (VCEO) 30V
Polarity/Channel Type NPN
Transistor Application SWITCHING
Element Configuration Single
Max Power Dissipation 500mW
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ