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RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT IGBT & Power Bipolar
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3872
≥1 USD $0.3872
≥10 USD $0.33264
≥100 USD $0.231176
≥500 USD $0.180488
Inventory: 38014
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.6W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2STN
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.6W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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