Max Junction Temperature (Tj) 150°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 180mV
Transition Frequency 130MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 3A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Collector Emitter Voltage (VCEO) 60V
Polarity/Channel Type NPN
Gain Bandwidth Product 130MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.4W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ