2STC5242
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
STMICROELECTRONICS 2STC5242 Bipolar (BJT) Single Transistor, NPN, 230 V, 30 MHz, 130 W, 8 A, 80
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5mm
Length 15.8mm
Height 18.7mm
Technical
hFE Min 80
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 230V
Collector Emitter Saturation Voltage 3V
Transition Frequency 30MHz
Collector Emitter Breakdown Voltage 230V
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Current - Collector Cutoff (Max) 5μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Max Collector Current 15A
Collector Emitter Voltage (VCEO) 230V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 30MHz
Transistor Application AMPLIFIER
Power - Max 150W
Power Dissipation 130W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number 2STC
Frequency 30MHz
Max Power Dissipation 130W
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
Alternative Model
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