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RoHS
RoHS RoHS compliant
Package TO-3P-3, SC-65-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3P Tube
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 120V
Max Breakdown Voltage 120V
Transition Frequency 20MHz
Collector Emitter Breakdown Voltage 120V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 3A 4V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 120V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 20MHz
Transistor Application SWITCHING
Power Dissipation 80W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number 2STC
Time@Peak Reflow Temperature-Max (s) 30
Frequency 20MHz
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 80W
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Mount Through Hole

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