2N5195
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
STMICROELECTRONICS 2N5195 Bipolar (BJT) Single Transistor, General Purpose, PNP, -80 V, 2 MHz, 40 W, -4 A, 20 hFE
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Buying Options
Total Price: USD $0.88
Unit Price: USD $0.88
≥1 USD $0.88
≥10 USD $0.836
≥100 USD $0.792
≥500 USD $0.748
≥1000 USD $0.7304
Inventory: 98
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 6.35mm
Length 25.4mm
Height 6.35mm
Technical
hFE Min 20
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage -1.2V
Transition Frequency 2MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 1A, 4A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1.5A 2V
Max Collector Current 4A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 2MHz
Transistor Application SWITCHING
Case Connection ISOLATED
Power Dissipation 40W
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number 2N51
Frequency 2MHz
Current Rating -4A
Max Power Dissipation 40W
Voltage - Rated DC -80V
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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