Operating Temperature 175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 800mW
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 5V @ 15mA, 150mA
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 7V