2SD2561
RoHS
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Package 3-ESIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN DARL 150V 17A MT200
PDF
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Buying Options
Total Price: USD $71.27
Unit Price: USD $71.26805
≥1 USD $71.26805
≥10 USD $69.04125
≥100 USD $66.81445
≥500 USD $64.5867
≥1000 USD $57.90535
Inventory: 2305
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 3-ESIP
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTOR
Max Power Dissipation 200W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration DARLINGTON WITH BUILT-IN RESISTOR
Power - Max 200W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 10A 4V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2.5V @ 10mA, 10A
Collector Emitter Breakdown Voltage 150V
Transition Frequency 70MHz
Frequency - Transition 70MHz
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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