2SB1570
RoHS
/
Package 3-ESIP
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP DARL 150V 12A MT200
PDF
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Buying Options
Total Price: USD $9.82
Unit Price: USD $9.81635
≥1 USD $9.81635
≥10 USD $8.05505
≥100 USD $7.8033
≥500 USD $7.55155
≥1000 USD $7.2998
Inventory: 1163
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Frequency - Transition 50MHz
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 7mA, 7A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 7A 4V
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 2.5V
Transistor Type PNP - Darlington
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 150W
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 150W
Additional Feature BUILT IN BIAS RESISTOR
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2007
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case 3-ESIP
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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