Collector-Base Capacitance-Max 1.5pF
Highest Frequency Band S B
Continuous Collector Current 50mA
Emitter Base Voltage (VEBO) 3V
Collector Base Voltage (VCBO) 20V
Max Breakdown Voltage 11V
Transition Frequency 3200MHz
Collector Emitter Breakdown Voltage 11V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 10V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 11V
Polarity/Channel Type NPN
Gain Bandwidth Product 3.2 GHz
Transistor Application AMPLIFIER
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 150mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ