Continuous Collector Current -500mA
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) 40V
Max Breakdown Voltage 32V
Collector Emitter Saturation Voltage -600mV
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 32V
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max) 1μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 3V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 32V
Polarity/Channel Type PNP
Gain Bandwidth Product 200MHz
Transistor Application AMPLIFIER
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 200mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ