TIP146
RoHS
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Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 4MHz
PDF
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Buying Options
Total Price: USD $2.39
Unit Price: USD $2.3936
≥1 USD $2.3936
≥10 USD $2.2704
≥100 USD $2.156
≥500 USD $2.0328
≥1000 USD $1.9888
Inventory: 557
Minimum: 1
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Technical Details
Technical
Case Connection COLLECTOR
Power - Max 125W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 10A
Transition Frequency 4MHz
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 240
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e0
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-218-3
Mounting Type Through Hole
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