TIP141
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 4MHz
PDF
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Buying Options
Total Price: USD $0.89
Unit Price: USD $0.8888
≥1 USD $0.8888
Inventory: 637
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Transition Frequency 4MHz
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Transistor Type NPN
Polarity/Channel Type NPN
Transistor Application SWITCHING
Power - Max 125W
Case Connection COLLECTOR
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 240
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e0
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-218-3
Mounting Type Through Hole
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