TIP116
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Bipolar (BJT) Transistor 1000 @ 1A 4V 2A 50W 25MHz
PDF
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Buying Options
Total Price: USD $0.18
Unit Price: USD $0.1848
≥1 USD $0.1848
Inventory: 1788
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Frequency - Transition 25MHz
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Transistor Type PNP - Darlington
Polarity/Channel Type PNP
Power - Max 50W
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 240
Terminal Position SINGLE
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.06
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e0
Packaging Bulk
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
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